A1SHB芯片三极管MOS的资料PW2301A

GENERAL DESCRIPTION

The PW2301A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .

FEATURES

VDS = -20V, ID = -3A

RDS(ON) < 110mΩ @ VGS=4.5V

Available in a 3-Pin SOT23-6 Package

A1SHB是PW2301A芯片,低导通内阻:RDS(ON) < 110mΩ @ VGS=4.5V

PW2301A的VDS = -20V, ID = -3A

PW2301A采用SPT23-3L的环保材质封装。

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A1SHB芯片三极管MOS的资料PW2301A