A1SHB芯片三极管MOS的资料PW2301A
GENERAL DESCRIPTION
The PW2301A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .
FEATURES
VDS = -20V, ID = -3A
RDS(ON) < 110mΩ @ VGS=4.5V
Available in a 3-Pin SOT23-6 Package
A1SHB是PW2301A芯片,低导通内阻:RDS(ON) < 110mΩ @ VGS=4.5V
PW2301A的VDS = -20V, ID = -3A
PW2301A采用SPT23-3L的环保材质封装。
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